JFETs Showing 32 Results
Apply Results: 32
| Images | Mfr Part # | Description | Manufacturer | Price | Qty | Availability | FET Type | Drain Source Voltage (Vdss) | Continuous Drain Current | On Resistance Rds On (Max) | Power Dissipation | Power (Max) | Operating Temperature | Installation Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | MMBF4393LT1G | SOT-23 JFETs ROHS | ON | +20 $0.10838 +200 $0.10169 +500 $0.09500 | Min Qty:20 Multiple: 1 | 2086 Ship immediately | - | 30V | - | - | 225mW | - | -55~+150℃ | - | - |
 | MMBF4392LT1G | JFET 30V 10mA | ON | +1 $0.16539 +10 $0.15444 +50 $0.13801 | Min Qty:1 Multiple: 1 | 610 Ship immediately | - | 30V | - | - | 225mW | 225mW | -55~+150℃(TJ) | - | - |
| MMBFJ310LT1G | SOT-23-3L JFETs ROHS | ON | +1 $0.15024 +30 $0.14506 +100 $0.13470 | Min Qty:1 Multiple: 1 | 225 Ship immediately | - | 25V | - | - | - | - | -55~+150℃(TJ) | - | - |
 | GP16530DS | 650V N-channel GaN FET in DFN6X8 | GaNPower | +1 $8.59236 +10 $8.27413 +100 $7.51036 | Out of Stock | - | 650V | 39A（Tc） | 65.8mΩ | 165W | 165W | -55~+150℃ | SMT | DFN8 | |
 | GP16515TD4 | 650V N-channel GaN FET in TO220-4L | GaNPower | +1 $6.95382 +10 $6.69627 +100 $6.07815 | Out of Stock | - | 650V | 19.5A（Tc） | 98.7mΩ | 82.5W | 82.5W | -55~+150℃ | DIP | TO220-4L | |
 | GP16520TD4 | 650V N-channel GaN FET in TO220-4L | GaNPower | +1 $7.65320 +10 $7.36975 +100 $6.68946 | Out of Stock | - | 650V | 26A（Tc） | 87mΩ | 110W | 110W | -55~+150℃ | DIP | TO220-4L | |
 | GP1A215TS_252 | 1200V N-channel GaN FET in TO252 | GaNPower | +1 $10.71403 +10 $9.88988 +30 $9.72504 | Out of Stock | - | 1.2KV | 19.5A | - | 82.5W | 82.5W | -55~+150℃ | - | TO252-3 | |
 | GP1A215TS_263 | 1200V N-channel GaN FET in TO263 | GaNPower | +1 $10.71403 +10 $9.88988 +30 $9.72504 | Out of Stock | - | 1.2KV | 19.5A | - | 82.5W | 82.5W | -55~+150℃ | - | - | |
 | GP1A015TS_263 | 1KV N-channel GaN FET in TO263 | GaNPower | +1 $10.71403 +10 $9.88988 +30 $9.72504 | Out of Stock | - | 1KV | 19.5A | - | 82.5W | 82.5W | -55~+150℃ | - | - | |
 | GP16510S | 650V N-channel GaN FET in SOP-16-W | GaNPower | +1 $5.95471 +10 $5.73416 +100 $5.20485 | Out of Stock | - | 650V | 13A（Tc） | 132mΩ | 55W | 55W | -55~+150℃ | SMT | SOP16 | |
 | GP16515DS | 650V N-channel GaN FET in DFN6X8 | GaNPower | +1 $6.95382 +10 $6.69627 +100 $6.07815 | Out of Stock | - | 650V | 19.5A（Tc） | 89.9mΩ | 82.5W | 82.5W | -55~+150℃ | SMT | DFN8 | |
 | GP16530TD4 | 650V N-channel GaN FET in TO220-4L | GaNPower | +1 $8.59236 +10 $8.27413 +100 $7.51036 | Out of Stock | - | 650V | 39A（Tc） | 69mΩ | 165W | 165W | -55~+150℃ | DIP | TO220-4L | |
 | GP16520DS | 650V N-channel GaN FET in DFN6X8 | GaNPower | +1 $7.65320 +10 $7.36975 +100 $6.68946 | Out of Stock | - | 650V | 26A（Tc） | 71.8mΩ | 110W | 110W | -55~+150℃ | SMT | DFN8 | |
 | J112_D26Z | JFETs N通道开关 TO92-3 | ON Semiconductor | +1 $0.16386 +30 $0.15801 +100 $0.15215 | Out of Stock | - | - | - | - | 625mW | - | -55~+150℃ | DIP | TO92-3 | |
 | TMC1320-LA | N channel +P channel VDS1=30V ID1=7.3A VDS2=-30V ID2=-5.3A VGS=±20V P=2.5W channel 2 | Trinamic | - | Out of Stock | - | 30V | 7.3,5.3A | - | 2.5W | 2.5W | -55~+150℃ | - | PQFN8 | |
| GP16515DS | 650V N-channel GaN FET in DFN6X8 | GaNPower | - | Out of Stock | - | 650V | 19.5A | - | 82.5W | 82.5W | -55~+150℃ | - | - | |
| GP16530TD4 | 650V N-channel GaN FET in TO220-4L | GaNPower | - | Out of Stock | - | 650V | 39A | - | 165W | 165W | -55~+150℃ | DIP | - | |
 | TMC1620-TO | N channel +P channel VDS1=60V ID1=6.6A VDS2=-60V ID2=-4.7A VGS=±20V P=3.13W channel 2 | Trinamic | - | Out of Stock | - | 60V | 6.6A，4.7A | - | 3.13W | 3.13W | -55~+150℃ | - | TO252-4 | |
 | 2SK208-Y(TE85L,F) | SC-59 JFETs ROHS | Toshiba | +1 $0.08841 | Min Qty:1 Multiple: 1 | 41 Ship in 4-7WD | - | - | - | - | - | - | - | - | - |
 | PMBF4393 | JFET PMBF4393/TO-236AB///REEL 7 Q3/T4 *STANDARD MARK S | NXP | +1 $0.40779 +30 $0.39373 +100 $0.36560 | Out of Stock | - | 20V | - | - | 250mW | - | +150℃ | - | - |
